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NOA1212 Datasheet(PDF) 7 Page - ON Semiconductor |
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NOA1212 Datasheet(HTML) 7 Page - ON Semiconductor |
7 / 8 page NOA1212 www.onsemi.com 7 DESCRIPTION OF OPERATION Ambient Light Sensor Architecture The NOA1212 employs a sensitive photo diode fabricated in ON Semiconductor’s standard CMOS process technology. The major components of this sensor are as shown in Figure 2 . The photons which are to be detected pass through an ON Semiconductor proprietary color filter limiting extraneous photons and thus performing as a band pass filter on the incident wave front. The filter only transmits photons in the visible spectrum which are primarily detected by the human eye and exhibits excellent IR rejection. The photo response of this sensor is as shown in Figure 3. The ambient light signal detected by the photo diode is converted to an analog output current by an amplifier with programmable gain. Table 4 shows the gain setting and the corresponding light sensitivity. Table 4. PROGRAMMABLE GAIN SETTINGS GB2 GB1 Mode Approximate Output Current @ 100 lux Approximate Output Current @ 1000 lux Saturation 0 0 Power Down − − − 0 1 High Gain 51 mA 510 mA ~10,000 lux 1 0 Medium Gain 4.9 mA 49 mA ~100,000 lux 1 1 Low Gain 0.54 mA 5.4 mA > 100,000 lux Power Down Mode This device can be placed in a power down mode by setting GB1 and GB2 to logic low level. In order for proper operation of this mode GB1 and GB2 should stay low 1.5 ms. External Component Selection The NOA1212 outputs a current in direct response to the incident illumination. In many applications it is desirable to convert the output current into voltage. It may also be desirable to filter the effects of 50/60 Hz flicker or other light source transients. Conversion from current to voltage may be accomplished by adding load resistor RL to the output. The value of RL is bounded on the high side by the potential output saturation of the amplifier at high ambient light levels. RL is bounded on the low side by the output current limiting of the internal amplifier and to minimize power consumption. Equation 1 describes the relationship of light input to current output for the High−Gain mode. I OUT + 51 mA 100 lux *EV (eq. 1) By adding RL to the output, IOUT is converted into a voltage according to Equation 2. V OUT + IOUT *RL + 51 mA 100 lux *EV *RL (eq. 2) The range of the output voltage is limited by the output stage to the VOMAX parameter value of VDD – 0.4 V at the maximum desired EV as shown in Equation 3. Equation 4 computes the value for RL (High−Gain mode). V OMAX + 51 mA 100 lux *EVMAX *RL (eq. 3) R L + VDD * 0.4 V E VMAX * 100 lux 51 mA (eq. 4) For example, consider a 5 V supply with a desired EVMAX = 1000 lux, the value of RL would be 8.85 k W. The value for RL can easily be computed for different NOA1212 gain ranges by substituting the appropriate output current at 100 lux from Table 4. The optional capacitor CL can be used to form a low−pass filter to remove 50/60 Hz filter or other unwanted noise sources as computed with Equation 5. C L + 1 2p fc RL (eq. 5) For our example, to filter out 60Hz flicker the value of CL would be 300 nF. Power Supply Bypassing and Printed Circuit Board Design Power supply bypass and decoupling can typically be handled with a low cost 0.1 mF to 1.0 mF capacitor. The exposed pad on the bottom of the package is internally connected to VSS pin 2 and should be soldered to the printed circuit board. |
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