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NOA1212 Datasheet(PDF) 7 Page - ON Semiconductor

Part # NOA1212
Description  Ambient Light Sensor
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NOA1212 Datasheet(HTML) 7 Page - ON Semiconductor

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NOA1212
www.onsemi.com
7
DESCRIPTION OF OPERATION
Ambient Light Sensor Architecture
The NOA1212 employs a sensitive photo diode fabricated
in ON Semiconductor’s
standard
CMOS
process
technology. The major components of this sensor are as
shown in Figure 2 . The photons which are to be detected
pass through an ON Semiconductor proprietary color filter
limiting extraneous photons and thus performing as a band
pass filter on the incident wave front. The filter only
transmits photons in the visible spectrum which are
primarily detected by the human eye and exhibits excellent
IR rejection. The photo response of this sensor is as shown
in Figure 3.
The ambient light signal detected by the photo diode is
converted to an analog output current by an amplifier with
programmable gain. Table 4 shows the gain setting and the
corresponding light sensitivity.
Table 4. PROGRAMMABLE GAIN SETTINGS
GB2
GB1
Mode
Approximate Output
Current @ 100 lux
Approximate Output
Current @ 1000 lux
Saturation
0
0
Power Down
0
1
High Gain
51
mA
510
mA
~10,000 lux
1
0
Medium Gain
4.9
mA
49
mA
~100,000 lux
1
1
Low Gain
0.54
mA
5.4
mA
> 100,000 lux
Power Down Mode
This device can be placed in a power down mode by
setting GB1 and GB2 to logic low level.
In order for proper operation of this mode GB1 and GB2
should stay low 1.5 ms.
External Component Selection
The NOA1212 outputs a current in direct response to the
incident illumination. In many applications it is desirable to
convert the output current into voltage. It may also be
desirable to filter the effects of 50/60 Hz flicker or other light
source transients.
Conversion from current to voltage may be accomplished
by adding load resistor RL to the output. The value of RL is
bounded on the high side by the potential output saturation
of the amplifier at high ambient light levels. RL is bounded
on the low side by the output current limiting of the internal
amplifier and to minimize power consumption.
Equation 1 describes the relationship of light input to
current output for the High−Gain mode.
I
OUT + 51 mA 100 lux *EV
(eq. 1)
By adding RL to the output, IOUT is converted into a
voltage according to Equation 2.
V
OUT + IOUT *RL + 51 mA 100 lux *EV *RL
(eq. 2)
The range of the output voltage is limited by the output
stage to the VOMAX parameter value of VDD – 0.4 V at the
maximum desired EV as shown in Equation 3. Equation 4
computes the value for RL (High−Gain mode).
V
OMAX + 51 mA 100 lux *EVMAX *RL
(eq. 3)
R
L + VDD * 0.4 V
E
VMAX * 100 lux 51 mA
(eq. 4)
For example, consider a 5 V supply with a desired EVMAX
= 1000 lux, the value of RL would be 8.85 k
W. The value for
RL can easily be computed for different NOA1212 gain
ranges by substituting the appropriate output current at
100 lux from Table 4.
The optional capacitor CL can be used to form a low−pass
filter to remove 50/60 Hz filter or other unwanted noise
sources as computed with Equation 5.
C
L + 1 2p fc RL
(eq. 5)
For our example, to filter out 60Hz flicker the value of CL
would be 300 nF.
Power Supply Bypassing and Printed Circuit Board
Design
Power supply bypass and decoupling can typically be
handled with a low cost 0.1
mF to 1.0 mF capacitor.
The exposed pad on the bottom of the package is internally
connected to VSS pin 2 and should be soldered to the printed
circuit board.


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