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LA4440 Datasheet(PDF) 1 Page - ON Semiconductor |
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LA4440 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 13 page 21500TH(KT)/90196RM/33194HO/8064KI/3233KI/O070KI,TS No.750-1/13 http://onsemi.com Semiconductor Components Industries, LLC, 2013 July, 2013 ORDERING INFORMATION See detailed ordering and shipping information on page 13 of this data sheet. LA4440 Features Package Dimensions Built-in 2 channels (dual) enabling use in stereo and bridge amplifier applications. Dual : 6W 2 (typ) Bridge : 19W (typ) Minimum number of external parts required. Small pop noise at the time of power supply ON/OFF and good starting balance. Good ripple rejection : 46dB (typ) Good channel separation. Small residual noise (Rg=0). Low distortion over a wide range from low frequencies to high frequencies. Easy to design radiator fin. Built-in audio muting function. Built-in protectors. a. Thermal protector b. Overvoltage, surge voltage protector c. Pin-to-pin short protector Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings unit Maximum supply voltage VCC max1 Quiescent (t=30s) 25 V VCC max2 Operating 18 V Surge supply voltage VCC (surge) t ≤ 0.2s 50 V Allowable power dissipation Pd max Tc=75°C, See Pd max – Ta characteristic 15 W Thermal resistance j-c Junction-to-case 3°C/W Operating temperature Topr –20 to +75 C Storage temperature Tstg –40 to +150 C Recommended Operating Conditions at Ta = 25 C Parameter Symbol Conditions Ratings unit Supply voltage VCC 13.2 V Load resistance RL Stereo 2 to8 Bridge 4 to 8 Monolithic Linear IC 6W 2-Channel, Bridge 19W(typ) Power Amplifier Ordering number : EN750F Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. unit : mm Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. |
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