FEATURES

• High-speed access time: 8, 10, 12, and 15 ns

• CMOS low power operation

— 250 mW (typical) operating

— 250 µW (typical) standby

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh

required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

IS61LV6416

64K x 16 HIGH-SPEED CMOS STATIC RAM

WITH 3.3V SUPPLY

DESCRIPTION

The

RAM organized as 65,536 words by 16 bits. It is fabricated

using

reliable process coupled with innovative circuit design

techniques, yields access times as fast as 8 ns with low power

consumption.

When CE is HIGH (deselected), the device assumes a standby

mode at which the power dissipation can be reduced down with

CMOS input levels.

Easy memory expansion is provided by using Chip Enable and

Output Enable inputs, CE and OE. The active LOW Write

Enable (WE) controls both writing and reading of the memory.

A data byte allows Upper Byte (UB) and Lower Byte (LB)

access.

The IS61LV6416 is packaged in the JEDEC standard 44-pin

400mil SOJ, 44-pin 400mil TSOP-2, and 48-pin 6*8mm TF-

BGA.

FUNCTIONAL BLOCK DIAGRAM

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors

which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.

A0-A15

CE

OE

WE

64K x 16

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

VCC

I/O

DATA

CIRCUIT

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

UB

LB

Integrated Circuit Solution Inc.

1

SR013-0C