30414HK No.A2299-1/15

Semiconductor Components Industries, LLC, 2014

March, 2014

Ver.1402018DS

http://onsemi.com

STK5F4U3C2D-E

Overview

This “Inverter Power IPM” is highly integrated device containing all High Voltage (HV) control from HV-DC to

3-phase outputs in a single DIP module (Dual-In line Package). Output stage uses IGBT/FRD technology and

implements Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag.

Internal Boost diodes are provided for high side gate boost drive.

Function

 Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit

 All control inputs and status outputs are at low voltage levels directly compatible with microcontrollers.

 A single power supply drive is enabled through the use of bootstrap circuits for upper power supplies

 Built-in dead-time for shoot-thru protection

 Having open emitter output for low side IGBTs; individual shunt resistor per phase for OCP

 Externally accessible embedded thermistor for substrate temperature measurement

 Shutdown function ‘ITRIP’ to disable all operations of the 6 phase output stage by external input

Certification

 UL1557 (File number: E339285).

Specifications

Absolute Maximum Ratings at Tc = 25

C

Parameter

Symbol

Remarks

Ratings

Unit

Supply voltage

VCC

P to NU,NV,NW, surge < 500V *1

450

V

Collector-emitter voltage

VCE

P to U,V,W, U to NU, V toNV, or W to NW

600

V

Output current

Io

P, NU,NV,NW,U,V,W terminal current.

±30

A

P, NU,NV,NW,U,V,W terminal current, Tc=100

C

±15

Output peak current

Iop

P, NU,NV,NW,U,V,W terminal current, PW=1ms.

±45

A

Pre-driver supply voltage

VD1,2,3,4

VB1-VS1,VB2-VS2,VB3-VS3,VDD-VSS *2

20

V

Input signal voltage

VIN

HIN1, 2, 3, LIN1, 2, 3, terminal.

0.3 to VDD

V

FAULT terminal voltage

VFAULT

FAULT terminal.

0.3 to VDD

V

Maximum loss

Pd

IGBT per channel

56.8

W

Junction temperature

Tj

IGBT, FRD

150

C

Storage temperature

Tstg

40 to +125

C

Operating temperature

Tc

IPM case

20 to +100

C

Tightening torque

MT

A screw part at use M4 type screw *3

1.17

Nm

Withstand Voltage

Vis

50Hz sine wave AC 1 minute *4

2000

VRMS

Reference voltage is “VSS” terminal voltage unless otherwise specified.

*1: Surge voltage developed by the switching operation due to the wiring inductance between the P and N terminals.

*2: Terminal voltage: VD1=VB1-VS1, VD2=VB2-VS2, VD3=VB3-VS3, VD4=VDD-VSS.

*3: Flatness of the heat-sink should be 0.25mm and below.

*4. Test conditions: AC 2500V, 1 second.

Ordering number : EN*A2299

Thick-Film Hybrid IC

Inverter Power IPM

for 3-phase Motor Drive

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

ORDERING INFORMATION

See detailed ordering and shipping information on page 15 of this data sheet.

Advance Information

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.