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STK5F1U3E3D-E Datasheet(PDF) 2 Page - ON Semiconductor |
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STK5F1U3E3D-E Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 16 page ![]() STK5F1U3E3D-E www.onsemi.com 2 Electrical Characteristics at Tc 25C, VD1, VD2, VD3, VD4=15V Parameter Symbol Conditions Test circuit Ratings Unit Min. Typ. Max. Power output section Collector to emitter cut-off current ICE VCE=600V Fig.1 - - 100 μA Bootstrap diode reverse current IR(BD) VR(BD)=600V - - 100 μA Collector to emitter saturation voltage VCE(sat) Ic=50A Upper side Fig.2 - 1.7 2.6 V Lower side*1 - 2.3 3.2 Ic=25A, Tj=100 C Upper side - 1.35 - Lower side*1 - 1.75 - Diode forward voltage VF IF=50A Upper side Fig.3 - 1.8 2.7 V Lower side*1 - 2.4 3.3 IF=25A, Tj=100 C Upper side - 1.45 - Lower side*1 - 1.85 - Junction to case thermal resistance θj-c(T) IGBT - - 1.5 - C/W θj-c(D) FWD - - 1.8 - C/W Control (Pre-driver) section Pre-drive power supply consumption current ID VD1, 2, 3=15V Fig.4 - 0.05 0.4 mA VD4=15V - 1.0 4.0 High level input voltage Vin H HIN1, HIN2, HIN3, LIN1, LIN2, LIN3 to VSS - 2.5 - - V Low level input voltage Vin L - - - 0.8 V Logic 1 input leakage current IIN+ VIN=+3.3V - - 100 195 μA Logic 0 input leakage current IIN- VIN=0V - - - 1 μA Bootstrap limiting resistor RBoot - - 39 - Ω Gate resistor Rb - - 1 - Ω Rg - - 36 - Ω Protection section Over-current protection current ISD PW=100μs,RSD=0Ω Fig.5 57 - 76 A Over-current protection noise filter time constant ISDNF - - 2.0 - us Vdd and VBx supply undervoltage positive going input threshold VddUV+ VBxUV+ - 10.6 11.1 11.6 V Vdd and VBx supply undervoltage negative going input threshold VddUV- VBxUV- - 10.4 10.9 11.4 V Vdd and VBx supply undervoltage Ilockout hysteresis VddUVH VBxUVH - - 0.2 - V FAULT terminal sink current IOSD VFAULT=0.1V - 1 1.5 - mA FAULT clearance delay time FLTCLR From time fault condition clear - 1.3 1.65 2.5 ms Switching character Switching time tON Io=50A, Inductive load Fig.6 - 0.7 1.5 μs tOFF - 1.1 2.1 μs Turn-on switching loss Eon Io=50A, VCC=300V, VD=15V, L=280μH - 1870 - μJ Turn-off switching loss Eoff - 1870 - μJ Total switching loss Etot - 3740 - μJ Turn-on switching loss Eon Io=25A,VCC=300V, VD=15V, L=280μH, Tc=100 C - 1075 - μJ Turn-off switching loss Eoff - 1300 - μJ Total switching loss Etot - 2375 - μJ Diode reverse recovery energy Erec Io=25A, VCC=300V, VD=15V, L=280μH, Tc=100 C - - 135 - μJ Diode reverse recovery time trr - 135 - ns Reverse bias safe operating area RBSOA Io = 76A, VCE=450V - Full square - Short circuit safe operating area SCSOA VCE=400V, Tc=100C - 4 - - μs Current output signal level ISO Io=50A - 0.427 0.45 0.474 V Reference voltage is VSS terminal voltage unless otherwise specified. *1: The lower side’s VCE(sat) and VF include a loss by the shunt resistance. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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