RN1701~RN1706

2001-06-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1701,RN1702,RN1703

RN1704,RN1705,RN1706

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l Including two devices in USV (ultra super mini type with 5 leads)

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2701~RN2706

Equivalent Circuit and Bias Resistor Values

°°°°C) (Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1701~1706

50

V

RN1701~1704

10

Emitter-base voltage

RN1705, 1706

5

V

Collector current

100

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

RN1701~1706

−55~150

°C

*: Total rating

JEDEC

―

EIAJ

―

TOSHIBA

2-2L1A

Weight: 6.2mg

Type No.

R1 (kΩ)R2 (kΩ)

RN1701

4.7

4.7

RN1702

10

10

RN1703

22

22

RN1704

47

47

RN1705

2.2

47

RN1706

4.7

47

Unit: mm