FLASH MEMORY

1

K9K4G08Q0M

K9K4G16Q0M

K9K4G08U0M

K9K4G16U0M

K9W8G08U1M

Document Title

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you

have any questions, please contact the SAMSUNG branch office near your office.

Revision No

0.0

0.1

0.2

0.3

0.4

0.5

Remark

Advance

Preliminary

Preliminary

Preliminary

Preliminary

History

1. Initial issue

1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package

1. The 3rd Byte ID after 90h ID read command is don’t cared.

The 5th Byte ID after 90h ID read command is deleted.

1. The K9W8G16U1M-YCB0,YIB0,PCB0,PIB0 is deleted in line up.

2. Note is added.

(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for

durations of 20 ns or less.)

3. Pb-free Package is added.

K9K4G08Q0M-PCB0,PIB0

K9K4G08U0M-PCB0,PIB0

K9K4G16U0M-PCB0,PIB0

K9K4G16Q0M-PCB0,PIB0

K9W8G08U1M-PCB0,PIB0

1. Added Addressing method for program operation.

1. The tADL(Address to Data Loading Time) is added.

- tADL Minimum 100ns

to the WE rising edge of first data cycle at program operation.

2. Added addressing method for program operation

3. PKG(TSOP1) Dimension Change

Draft Date

Feb. 19. 2003

Mar. 31. 2003

Apr. 9. 2003

Apr. 30. 2003

Jan. 27. 2004

May.31. 2004