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IRGB10B60KD Datasheet(PDF) 1 Page - International Rectifier |
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IRGB10B60KD Datasheet(HTML) 1 Page - International Rectifier |
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1 / 15 page  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features 8/18/04 • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. Benefits www.irf.com 1 • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 22 IC @ TC = 100°C Continuous Collector Current 12 ICM Pulsed Collector Current 44 ILM Clamped Inductive Load Current 44 A IF @ TC = 25°C Diode Continuous Forward Current 22 IF @ TC = 100°C Diode Continuous Forward Current 10 IFM Diode Maximum Forward Current 44 VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 156 PD @ TC = 100°C Maximum Power Dissipation 62 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) W Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-Case - IGBT ––– ––– 0.8 RθJC Junction-to-Case - Diode ––– ––– 3.4 RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– °C/W RθJA Junction-to-Ambient, typical socket mount ––– ––– 62 RθJA Junction-to-Ambient (PCB Mount, steady state) ––– ––– 40 Wt Weight ––– 1.44 ––– g IRGB10B60KD IRGS10B60KD IRGSL10B60KD E G n-channel C VCES = 600V IC = 12A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.8V D2Pak IRGS10B60KD TO-220AB IRGB10B60KD TO-262 IRGSL10B60KD PD - 94382D |
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