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IRGB10B60KD Datasheet(PDF) 2 Page - International Rectifier |
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IRGB10B60KD Datasheet(HTML) 2 Page - International Rectifier |
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2 / 15 page  IRG/B/S/SL10B60KD 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C) VCE(on) Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 IC = 10A, VGE = 15V ––– 2.20 2.50 V IC = 10A, VGE = 15V TJ = 150°C VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) gfe Forward Transconductance ––– 7.0 ––– S VCE = 50V, IC = 10A, PW=80µs ICES Zero Gate Voltage Collector Current ––– 3.0 150 µA VGE = 0V, VCE = 600V ––– 300 700 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop ––– 1.30 1.45 IC = 10A ––– 1.30 1.45 V IC = 10A TJ = 150°C IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Ref.Fig. 5, 6,7 9,10,11 9,10,11 12 8 Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ––– 38 ––– IC = 10A Qge Gate - Emitter Charge (turn-on) ––– 4.3 ––– nC VCC = 400V Qgc Gate - Collector Charge (turn-on) ––– 16.3 ––– VGE = 15V Eon Turn-On Switching Loss ––– 140 247 µJ IC = 10A, VCC = 400V Eoff Turn-Off Switching Loss ––– 250 360 VGE = 15V,RG = 47Ω, L = 200µH Etot Total Switching Loss ––– 390 607 Ls = 150nH TJ = 25°C td(on) Turn-On Delay Time ––– 30 39 IC = 10A, VCC = 400V tr Rise Time ––– 20 29 VGE = 15V, RG = 47Ω, L = 200µH td(off) Turn-Off Delay Time ––– 230 262 ns Ls = 150nH, TJ = 25°C tf Fall Time ––– 23 32 Eon Turn-On Switching Loss ––– 230 340 IC = 10A, VCC = 400V Eoff Turn-Off Switching Loss ––– 350 464 µJ VGE = 15V,RG = 47Ω, L = 200µH Etot Total Switching Loss ––– 580 804 Ls = 150nH TJ = 150°C td(on) Turn-On Delay Time ––– 30 39 IC = 10A, VCC = 400V tr Rise Time ––– 20 28 VGE = 15V, RG = 47Ω, L = 200µH td(off) Turn-Off Delay Time ––– 250 274 ns Ls = 150nH, TJ = 150°C tf Fall Time ––– 26 34 Cies Input Capacitance ––– 620 ––– VGE = 0V Coes Output Capacitance ––– 62 ––– pF VCC = 30V Cres Reverse Transfer Capacitance ––– 22 ––– f = 1.0MHz TJ = 150°C, IC = 44A, Vp =600V VCC = 500V, VGE = +15V to 0V, µs TJ = 150°C, Vp =600V,RG = 47Ω VCC = 360V, VGE = +15V to 0V Erec Reverse Recovery energy of the diode ––– 245 330 µJ TJ = 150°C trr Diode Reverse Recovery time ––– 90 105 ns VCC = 400V, IF = 10A, L = 200µH Irr Diode Peak Reverse Recovery Current ––– 19 22 A VGE = 15V,RG = 47Ω, Ls = 150nH Switching Characteristics @ TJ = 25°C (unless otherwise specified) RBSOA Reverse Bias Safe Operting Area FULL SQUARE SCSOA Short Circuit Safe Operting Area 10 ––– ––– Ref.Fig. CT1 CT4 CT4 13,15 WF1WF2 4 CT2 CT3 WF4 17,18,19 20, 21 CT4,WF3 CT4 RG = 47Ω 14, 16 CT4 WF1 WF2 Note to are on page 15 |
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