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INA3221-Q1

SBOS776B – MARCH 2016 – REVISED MARCH 2016

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Copyright © 2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

–0.3 V to +26 V.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Voltage

6

V

Analog inputs

IN+, IN–

(2)

–26

26

V

–0.3

26

VPU

26

Digital outputs

Critical, warning, power valid

6

V

Timing control

26

Serial bus

Data line, SDA

(GND – 0.3)

6

V

Clock line, SCL

(GND – 0.3)

Current

Input, into any pin

5

mA

Open-drain, digital output

10

Temperature

–40

125

°C

150

–65

150

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±2500

V

Charged-device model (CDM), per AEC Q100-011

±1000

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Operating supply voltage

2.7

5.5

V

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report (SPRA953).

7.4 Thermal Information

INA3221-Q1

UNIT

RGV (VQFN)

16 PINS

Junction-to-ambient thermal resistance

36.5

°C/W

Junction-to-case (top) thermal resistance

42.7

°C/W

Junction-to-board thermal resistance

14.7

°C/W

Junction-to-top characterization parameter

0.5

°C/W

Junction-to-board characterization parameter

14.8

°C/W

Junction-to-case (bottom) thermal resistance

3.3

°C/W