FQPF10N60C datasheet(4/10 Pages) FAIRCHILD

Part #	FQPF10N60C

Description	600V N-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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4 / 10 page

Rev. B, October 2003

10

0

10

1

10

2

10

3

10

-1

10

0

10

1

10

2

100 ms

10

µs

DC

10 ms

1 ms

100

µs

Operation inThis Area

is Limitedby R

DS(on)

※ Notes:

1. T

C = 25

o

C

2. T

J = 150

o

C

3. SinglePulse

V

DS, Drain-Source Voltage [V]

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

10

2

100 ms

10

µs

DC

10 ms

1 ms

100

µs

Operation in This Area

is Limited by R

DS(on)

※ Notes :

1. T

C = 25

o

C

2. T

J

= 150

o

C

3. Single Pulse

V

DS, Drain-Source Voltage [V]

Typical Characteristics (Continued)

Figure 9-1. Maximum Safe Operating Area

for FQP10N60C

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Figure 9-2. Maximum Safe Operating Area

for FQPF10N60C

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※Notes:

1. V

GS

=0V

2. I

D = 250

μ A

T

J, Junction Temperature [

o

C]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. V

GS = 10 V

2. I

D = 4.75 A

T

J, Junction Temperature [

o

C]

25

50

75

100

125

150

0

2

4

6

8

10

T

C, Case Temperature [

℃]

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