If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Storage Temperature Range

−65˚C to +150˚C

Operating Temperature Range

DS2003TN, DS2003TM

−40˚C to +105˚C

DS2003CN, DS2003CM

0˚C to +85˚C

Lead Temperature

Soldering, 10 seconds

265˚C

25˚C

N16E Package

1330 mW

M16A Package

770 mW

Input Voltage

30V

Output Voltage

55V

Emitter-Base Voltage

6.0V

Continuous Collector Current

500 mA

Continuous Base Current

25 mA

Electrical Characteristics

T

Symbol

Parameter

Conditions

Min

Typ

Max

Units

I

CEX

Output Leakage

Current

T

20

T

100

µA

T

150

V

CE(Sat)

Collector-Emitter

Saturation Voltage

I

1.25

1.6

V

I

1.1

1.3

I

0.9

1.1

I

I(ON)

Input Current

V

0.93

1.35

mA

I

I(OFF)

Input Current

(Note 4)

T

I

50

100

µA

V

I(ON)

Input Voltage

(Note 5)

V

2.4

V

V

2.7

V

3.0

C

I

Input Capacitance

15

30

pF

t

PLH

Turn-On Delay

0.5 V

1.0

µs

t

PHL

Turn-Off Delay

0.5 V

1.0

µs

I

R

Clamp Diode

Leakage Current

V

50

µA

T

100

µA

V

F

Clamp Diode

Forward Voltage

I

1.7

2.0

V

Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices

should be operated at these limits. The tables of “Electrical Characteristics” provide conditions for actual device operation.

Note 2: All limits apply to the complete Darlington series except as specified for a single device type.

30%.

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