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2N4351 Datasheet(PDF) 1 Page - Linear Integrated Systems |
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2N4351 Datasheet(HTML) 1 Page - Linear Integrated Systems |
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1 / 2 page  FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN gfs = 1000µS ABSOLUTE MAXIMUM RATINGS 1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +200 °C Operating Junction Temperature -55 to +150 °C Maximum Power Dissipation Continuous Power Dissipation 375mW Maximum Current Drain to Source 100mA Maximum Voltages Drain to Body 25V Drain to Source 25V Peak Gate to Source 2 ±125V ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS BVDSS Drain to Source Breakdown Voltage 25 ID = 10µA, VGS = 0V VDS(on) Drain to Source "On" Voltage 1 ID = 2mA, VGS = 10V VGS(th) Gate to Source Threshold Voltage 1 5 V VDS = 10V, ID = 10µA IGSS Gate Leakage Current 10 pA VGS = ±30V, VDS = 0V IDSS Drain Leakage Current "Off" 10 nA VDS = 10V, VGS = 0V ID(on) Drain Current "On" 3 mA VGS = 10V, VDS = 10V gfs Forward Transconductance 1000 µS VDS = 10V, ID = 2mA, f = 1MHz rDS(on) Drain to Source "On" Resistance 300 Ω VGS = 10V, ID = 0A, f = 1kHz Crss Reverse Transfer Capacitance 1.3 VDS = 0V, VGS = 0V, f = 140kHz Ciss Input Capacitance 5.0 VDS = 10V, VGS = 0V, f = 140kHz Cdb Drain to Body Capacitance 5.0 pF VDB = 10V, f = 140kHz * Body tied to Case. G S D C 2 14 3 BOTTOM VIEW TO-72 Linear Integrated Systems 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 |
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