LM78S40

T

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OUTPUT SWITCH SECTION

h

FE

Output Transistor Current

Gain

I

70

I

L

Output Leakage Current

V

10

nA

POWER DIODE

V

FD

Forward Voltage Drop

I

1.25

1.5

V

I

DR

Diode Leakage Current

V

10

nA

COMPARATOR

V

IO

Input Offset Voltage

V

1.5

15

mV

I

IB

Input Bias Current

V

35

200

nA

I

IO

Input Offset Current

V

5.0

75

nA

V

CM

Common Mode Voltage

Range

T

0

V

V

PSRR

Power Supply Rejection

Ratio

V

70

96

dB

OPERATIONAL AMPLIFIER

V

IO

Input Offset Voltage

V

4.0

15

mV

I

IB

Input Bias Current

V

30

200

nA

I

IO

Input Offset Current

V

5.0

75

nA

A

VS

+

Voltage Gain

+

R

25

250

V/mV

V

A

VS

−

Voltage Gain

−

R

25

250

V/mV

V

V

CM

Common Mode Voltage

Range

T

0

V

V

CMR

Common Mode Rejection

V

76

100

dB

PSRR

Power Supply Rejection

Ratio

V

76

100

dB

I

O

+

Output Source Current

T

75

150

mA

I

O

−

Output Sink Current

T

10

35

mA

SR

Slew Rate

T

0.6

V/µs

V

OL

Output Voltage LOW

I

1.0

V

V

OH

Output Voltage High

I

V + (Op

V

Amp) −

3V

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when ordering the device

beyond its rated operating conditions.

Note 3: Ratings apply to ambient temperature at 25˚C. Above this temperature, derate the 16L-Ceramic DIP at 10 mW/˚C, and the 16L-Molded DIP at 8.3 mW/˚C.

Note 4: For supply voltages less than 30V, the absolute maximum voltage is equal to the supply voltage.

Note 5: A military RETS specification is available on request. At the time of printing, the LM78S40 RETS specification complied with the Min and Max limits in this

table. The LM78S40J may also be procured as a Standard Military Drawing.

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