IRF630PBF datasheet(1/6 Pages) THINKISEMI

Part #	IRF630PBF

Description	9A,200V Heatsink N-Channel Type Power MOSFET

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Manufacturer	THINKISEMI [Thinki Semiconductor Co., Ltd.]

Direct Link	http://www.thinkisemi.com

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Absolute Maximum Ratings

Symbol

Parameter

Value

Units

VDSS

Drain to Source Voltage

200

V

ID

Continuous Drain Current(@TC = 25°C)

9A

Continuous Drain Current(@TC = 100°C)

5.8

A

IDM

Drain Current Pulsed

(Note 1)

36

A

VGS

Gate to Source Voltage

±30

V

EAS

Single Pulsed Avalanche Energy

(Note 2)

180

mJ

EAR

Repetitive Avalanche Energy

(Note 1)

7.8

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

5.5

V/ns

PD

Total Power Dissipation(@TC = 25 °C)

78

W

Derating Factor above 25 °C

0.62

W/°C

TSTG, TJ

Operating Junction Temperature & Storage Temperature

- 55 ~ 150

°C

TL

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.

300

°C

Thermal Characteristics

Symbol

Parameter

Value

Units

Min.

Typ.

Max.

RTJC

Thermal Resistance, Junction-to-Case

-

1.61

°C/W

RTCS

Thermal Resistance, Case to Sink

-

0.5

-

°C/W

RTJA

Thermal Resistance, Junction-to-Ambient

-

62.5

°C/W

Features

RDS(on) (Max 0.4

)@VGS=10V

Gate Charge (Typical 44nC)

Improved dv/dt Capability

High ruggedness

100% Avalanche Tested

RDS(ON) = 0.4 ohm

ID = 9A

BVDSS = 200V

1.Gate

2.Drain

3.Source

®

IRF630PBF

Pb Free Plating Product

IRF630PBF

Pb

9A,200V Heatsink N-Channel Type Power MOSFET

TO-220C

1

2

3

General Description

This N-channel enhancement mode field-effect power transistor

using THINKI Semiconductor advanced planar stripe, DMOS technol-

ogy intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged

avalanche characteristics. The TO-220C pkg is well suited for

adaptor power unit and small power inverter application.

http://www.thinkisemi.com/

Page 1/6

Rev.05

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