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AT49BV001A-55TI Datasheet(PDF) 1 Page - ATMEL Corporation |
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AT49BV001A-55TI Datasheet(HTML) 1 Page - ATMEL Corporation |
1 / 18 page 1 Features • Single Supply for Read and Write: 2.7 to 3.6V • Fast Read Access Time – 55 ns • Internal Program Control and Timer • Sector Architecture – One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks – Two Main Memory Blocks (32K Bytes, 64K Bytes) • Fast Erase Cycle Time – 3 Seconds • Byte-by-Byte Programming – 30 µs/Byte Typical • Hardware Data Protection • DATA Polling for End of Program Detection • Low Power Dissipation – 15 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV001A(N)(T) is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipation of just 54 mW over the industrial temperature range. 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage ™ Flash Memory AT49BV001A AT49BV001AN AT49BV001AT AT49BV001ANT Rev. 3364C–FLASH–9/03 PLCC Top View Pin Configurations Pin Name Function A0 - A16 Addresses CE Chip Enable OE Output Enable WE Write Enable RESET RESET I/O0 - I/O7 Data Inputs/Outputs NC No Connect 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 A14 A13 A8 A9 A11 OE A10 CE I/O7 VSOP Top View (8 x 14 mm) or TSOP Top View (8 x 20 mm) Type 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A11 A9 A8 A13 A14 NC WE VCC *RESET A16 A15 A12 A7 A6 A5 A4 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 Note: *This pin is a NC on the AT49BV001AN(T). |
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