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M29F800DT Datasheet(PDF) 30 Page - STMicroelectronics

Part # M29F800DT
Description  8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory
Download  39 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29F800DT Datasheet(HTML) 30 Page - STMicroelectronics

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Table 23. CFI Query System Interface Information
Note: 1. Not supported in the CFI
Address
Data
Description
Value
x16
x8
1Bh
36h
0045h
VCC Logic Supply Minimum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
4.5V
1Ch
38h
0055h
VCC Logic Supply Maximum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
5.5V
1Dh
3Ah
0000h
VPP [Programming] Supply Minimum Program/Erase voltage
NA
1Eh
3Ch
0000h
VPP [Programming] Supply Maximum Program/Erase voltage
NA
1Fh
3Eh
0004h
Typical timeout per single byte/word program = 2n µs
16µs
20h
40h
0000h
Typical timeout for minimum size write buffer program = 2n µs
NA
21h
42h
000Ah
Typical timeout per individual block erase = 2n ms
1s
22h
44h
0000h
Typical timeout for full chip erase = 2n ms
see note (1)
23h
46h
0004h
Maximum timeout for byte/word program = 2n times typical
256µs
24h
48h
0000h
Maximum timeout for write buffer program = 2n times typical
NA
25h
4Ah
0003h
Maximum timeout per individual block erase = 2n times typical
8s
26h
4Ch
0000h
Maximum timeout for chip erase = 2n times typical
see note (1)


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