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M29F800DT Datasheet(PDF) 20 Page - STMicroelectronics |
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M29F800DT Datasheet(HTML) 20 Page - STMicroelectronics |
20 / 39 page M29F800DT, M29F800DB 20/39 Table 11. DC Characteristics Note: 1. Sampled only, not 100% tested. Symbol Parameter Test Condition Min Max Unit ILI Input Leakage Current 0V ≤ VIN ≤ VCC ±1 µA ILO Output Leakage Current 0V ≤ VOUT ≤ VCC ±1 µA ICC1 Supply Current (Read) E = VIL, G = VIH, f = 6MHz 20 mA ICC2 Supply Current (Standby) TTL E = VIH 2mA ICC3 Supply Current (Standby) CMOS E = VCC ±0.2V, RP = VCC ±0.2V 150 µA ICC4 (1) Supply Current (Program/Erase) Program/Erase Controller active 20 mA VIL Input Low Voltage –0.5 0.8 V VIH Input High Voltage 2VCC + 0.5 V VOL Output Low Voltage IOL = 5.8mA 0.45 V VOH Output High Voltage TTL CMOS IOH = –2.5mA 2.4 V VID Identification Voltage 11.5 12.5 V IID Identification Current A9 = VID 100 µA VLKO Program/Erase Lockout Supply Voltage 3.2 4.2 V |
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