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M29F800DT Datasheet(PDF) 1 Page - STMicroelectronics |
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M29F800DT Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 39 page 1/39 February 2003 M29F800DT M29F800DB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE –VCC = 5V ±10% for Program, Erase and Read s ACCESS TIME: 55, 70, 90ns s PROGRAMMING TIME – 10µs per Byte/Word typical s 19 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 16 Main Blocks s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithms s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming s TEMPORARY BLOCK UNPROTECTION MODE s COMMON FLASH INTERFACE – 64 bit Security Code s LOW POWER CONSUMPTION – Standby and Automatic Standby s 100,000 PROGRAM/ERASE CYCLES per BLOCK s ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29F800DT: 22ECh – Bottom Device Code M29F800DB: 2258h Figure 1. Packages TSOP48 (N) 12 x 20mm SO44 (M) |
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