IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYN120N65C3D1

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

40

68

S

C

6900

pF

C

oes

V

585

pF

C

res

140

pF

Q

g(on)

265

nC

Q

ge

I

50

nC

Q

gc

110

nC

t

d(on)

28

ns

t

ri

29

ns

E

on

1.25

mJ

t

d(off)

127

ns

t

fi

46

ns

E

0.50

mJ

t

d(on)

27

ns

t

ri

30

ns

E

on

2.45

mJ

t

d(off)

156

ns

t

fi

60

ns

E

off

0.70

mJ

R

thJC

0.18 °C/W

R

thCS

0.05

°C/W

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2

Reverse Diode (FRED)

Symbol Test Conditions

Characteristic Values

(T

Min. Typ.

Max.

V

F

I

3.0

V

T

2.0

V

I

rr

T

42

A

t

rr

T

150

ns

R

thJC

0.38 °C/W

I

V

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

SOT-227B miniBLOC (IXYN)