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NP179N04TUK-E1-AY Datasheet(PDF) 2 Page - Renesas Technology Corp |
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NP179N04TUK-E1-AY Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 8 page  NP179N04TUK Preliminary R07DS1248EJ0100 Rev.1.00 Page 2 of 6 Feb 12, 2015 Electrical Characteristics (TA = 25°C) Item Symbol MIN. TYP. MAX. Unit Test Conditions Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 40 V, VGS = 0 V Gate Leakage Current IGSS — — ±100 nA VGS = ±20 V, VDS = 0 V Gate to Source Threshold Voltage VGS(th) 2.0 3.0 4.0 V VDS = VGS, ID = 250 μA Forward Transfer Admittance *1 | yfs | 65 130 — S VDS = 5 V, ID = 90 A Drain to Source On-state Resistance *1 RDS(on) — 1.05 1.25 m Ω VGS = 10 V, ID = 90 A Input Capacitance Ciss — 8900 13350 pF VDS = 25 V VGS = 0 V f = 1 MHz Output Capacitance Coss — 1200 1800 pF Reverse Transfer Capacitance Crss — 440 800 pF Turn-on Delay Time td(on) — 33 80 ns VDD = 20 V, ID = 90 A VGS = 10 V RG = 0 Ω Rise Time tr — 12 30 ns Turn-off Delay Time td(off) — 110 220 ns Fall Time tf — 16 40 ns Total Gate Charge QG — 160 240 nC VDD = 32 V VGS = 10 V ID = 180 A Gate to Source Charge QGS — 42 — nC Gate to Drain Charge QGD — 42 — nC Body Diode Forward Voltage *1 VF(S-D) — 0.9 1.5 V IF = 180 A, VGS = 0 V Reverse Recovery Time trr — 63 — ns IF = 180 A, VGS = 0 V di/dt = 100 A/ μs Reverse Recovery Charge Qrr — 100 — nC Note: *1 Pulsed test TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. RL VDD TEST CIRCUIT 2 SWITCHING TIME RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS 0 Duty Cycle ≤ 1% τ = 1 μs τ VGS Wave Form VDS Wave Form VGS VDS 10% 0 0 90% 90% 90% VGS V DS ton toff td(on) tr td(off) tf 10% 10% |
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