NP179N04TUK-E1-AY datasheet(5/8 Pages) RENESAS

Part #	NP179N04TUK-E1-AY

Description	N-channel Power MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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5 / 8 page

NP179N04TUK

Preliminary

R07DS1248EJ0100 Rev.1.00

Page 5 of 6

Feb 12, 2015

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

100

1000

100000

10000

0.01

0.1

1

10

100

VDS - Drain to Source Voltage - V

REVERSE RECOVERY TIME vs.

DRAIN CURRENT

1

10

100

0.1

1

10

1000

100

IF - Drain Current - A

SWITCHING CHARACTERISTICS

1

10

100

1000

0.1

1

10

1000

100

ID - Drain Current - A

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

0

5

10

15

20

25

30

35

0

20

40

60

80

120

160 180

100

140

QG- Gate Charge - nC

0

2

4

6

8

10

14

12

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

0.1

1

10

100

1000

0

0.2

0.4

0.6

0.8

1.0

1.2

VF(S-D) - Source to Drain Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

–100

–50

0

50

100

150

200

Tch - Channel Temperature - °C

0

2

1

3

Pulsed

VGS = 10 V

VGS = 0 V

di/dt = 100 A/

μs

VGS = 0 V

VGS = 10 V

ID = 90 A

Pulsed

VDD = 20 V

VGS = 10 V

RG = 0 Ω

td(off)

td(on)

tf

tr

VGS = 0 V

f = 1 MHz

Ciss

Coss

Crss

VGS

VDS

VDD = 32 V

20 V

8 V

ID = 180 A

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NP179N04TUK-E1-AY Datasheet(PDF) 5 Page - Renesas Technology Corp

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