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NP45N06VDK Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # NP45N06VDK
Description  N-channel Power MOS FET
Download  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP45N06VDK Datasheet(HTML) 5 Page - Renesas Technology Corp

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NP45N06VDK
R07DS1295EJ0100 Rev.1.00
Page 5 of 7
Oct 26, 2015
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
0
25
50
75
100
125
150
01
23
VGS=10V
Pulsed
VDS - Drain to Source Voltage - V
0.001
0.01
0.1
1
10
100
012
34
VDS = 10V
Pulsed
TA=175°C
75°C
25°C
-55°C
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN
CURRENT
0
1
2
3
-100
-50
0
50
100
150
200
VDS = VGS
ID=250μA
Tch - Channel Temperature - °C
1
10
100
0.1
1
10
100
VDS = 5V
Pulsed
TA=175°C
150°C
75°C
25°C
-55°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
5
10
15
20
25
0.1
1
10
100
1000
Pulsed
VGS=10V
4.5V
ID - Drain Current - A
0
5
10
15
20
25
0
5
10
15
20
Pulsed
ID=23A
VGS - Gate to Source Voltage - V


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