4X16E83VTW-6 datasheet(8/9 Pages) ETC

Part #	4X16E83VTW-6

Description	4 MEG x 16 EDO DRAM

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Manufacturer	ETC [List of Unclassifed Manufacturers]

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8

Icc OPERATING CONDITIONS AND MAXIMUM LIMITS

(Notes: 1, 2, 3, 5, 6) (VCC = +3.3V ±0.3V)

PARAMETER/CONDITION

SYMBOL SPEED

4K

8K

UNITS NOTES

STANDBY CURRENT: TTL

ICC1

ALL

1

mA

(RAS# = CAS# = VIH)

STANDBY CURRENT: CMOS

(RAS# = CAS# ³ VCC - 0.2V; DQs may be left open;

ICC2

ALL

500

µA

Other inputs: VIN ³ VCC - 0.2V or VIN £ 0.2V)

OPERATING CURRENT: Random READ/WRITE

ICC3

-5

150

115

mA

26

Average power supply current

-6

165

130

(RAS#, CAS#, address cycling: tRC = tRC [MIN])

OPERATING CURRENT: EDO PAGE MODE

ICC4

-5

120

mA

26

Average power supply current

-6

125

(RAS# = VIL, CAS#, address cycling: tPC = tPC [MIN])

REFRESH CURRENT: RAS#-ONLY

ICC5

-5

150

115

mA

22

Average power supply current

-6

165

130

(RAS# cycling, CAS# = VIH: tRC = tRC [MIN])

REFRESH CURRENT: CBR

ICC6

-5

150

mA

4, 7,

Average power supply current

-6

165

23

(RAS#, CAS#, address cycling: tRC = tRC [MIN])

REFRESH CURRENT: Extended

CC

7

ALL

400

µA

4, 7,

Average power supply current: CAS# = 0.2V or CBR cycling;

23, 37

RAS# = tRAS (MIN); WE# = VCC - 0.2V; A0-A10, OE# and

DIN = VCC - 0.2V or 0.2V (DIN may be left open); tRC = 125µs

REFRESH CURRENT: Self

CC

8

ALL

350

µA

4, 7,

Average power supply current: CBR with RAS# ³ tRASS (MIN)

37

and CAS# held LOW; WE# = VCC - 0.2V; A0-A10, OE# and

DIN = VCC - 0.2V or 0.2V (DIN may be left open)

MAX

4 MEG x 16

EDO DRAM

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