4X16E83VTW-6 datasheet(7/9 Pages) ETC

Part #	4X16E83VTW-6

Description	4 MEG x 16 EDO DRAM

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7

ABSOLUTE MAXIMUM RATINGS*

Voltage on VCC Relative to VSS ................ -1V to +4.6V

Voltage on NC, Inputs or I/O Pins

Relative to VSS ....................................... -1V to +4.6V

Operating Temperature, TA (ambient)

Commercial ......................................... 0°C to +70°C

Extended (IT) ................................. -40°C to +85°C**

Storage Temperature (plastic) ............ -55°C to +150°C

Power Dissipation ................................................... 1W

*Stresses greater than those listed under “Absolute

Maximum Ratings” may cause permanent damage to

the device. This is a stress rating only, and functional

operation of the device at these or any other conditions

above those indicated in the operational sections of

this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may

affect reliability.

DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS

(Note: 1) (VCC = +3.3V ±0.3V)

PARAMETER/CONDITION

SYMBOL

MIN

MAX

UNITS NOTES

SUPPLY VOLTAGE

VCC

3

3.6

V

INPUT HIGH VOLTAGE:

Valid Logic 1; All inputs, I/Os and any NC

VIH

2VCC + 0.3

V

35

INPUT LOW VOLTAGE:

Valid Logic 0; All inputs, I/Os and any NC

VIL

-0.3

0.8

V

35

INPUT LEAKAGE CURRENT:

Any input at VIN (0V

VIN

VCC + 0.3V);

II

-2

2

µA

36

All other pins not under test = 0V

OUTPUT HIGH VOLTAGE:

IOUT = -2mA

VOH

2.4

–

V

OUTPUT LOW VOLTAGE:

IOUT = 2mA

VOL

–

0.4

V

OUTPUT LEAKAGE CURRENT:

Any output at VOUT (0V

VOUT

VCC + 0.3V);

IOZ

-5

5

µA

DQ is disabled and in High-Z state

4 MEG x 16

EDO DRAM

<_

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