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4X16E83VTW-6 Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers |
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4X16E83VTW-6 Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers |
3 / 9 page ![]() 3 Figure 1 WORD and BYTE WRITE Example STORED DATA 1 1 0 1 1 1 1 1 RAS# CASL# WE# X = NOT EFFECTIVE (DON?T CARE) ADDRESS 1 ADDRESS 0 0 1 0 1 0 0 0 0 WORD WRITE LOWER BYTE WRITE CASH# INPUT DATA 0 0 1 0 0 0 0 0 1 0 1 0 1 1 1 1 X X X X X X X X INPUT DATA 1 1 0 1 1 1 1 1 INPUT DATA STORED DATA 1 1 0 1 1 1 1 1 INPUT DATA STORED DATA 0 0 1 0 0 0 0 0 1 0 1 0 1 1 1 1 STORED DATA 0 0 1 0 0 0 0 0 1 0 1 0 1 1 1 1 X X X X X X X X 1 0 1 0 1 1 1 1 UPPER BYTE (DQ8-DQ15) OF WORD LOWER BYTE (DQ0-DQ7) OF WORD GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 4,096 rows by 1,024 columns on the MEM4X16E43VTW. During READ or WRITE cycles, each location is uniquely addressed via the address bits: 12 row-address bits (A0-A11) and 10 column-address bits (A0-A9) on the MEM4X16E43VTW version. In addition, the byte and word accesses are supported via the two CAS# pins (CASL# and CASH#). The CAS# functionality and timing related to ad- dress and control functions (e.g., latching column addresses or selecting CBR REFRESH) is such that the internal CAS# signal is determined by the first external CAS# signal (CASL# or CASH#) to transition LOW and the last to transition back HIGH. The CAS# functional- ity and timing related to driving or latching data is such that each CAS# signal independently controls the asso- ciated eight DQ pins. The row address is latched by the RAS# signal, then the column address is latched by CAS#. This device provides EDO-PAGE-MODE operation, allowing for fast successive data operations (READ, WRITE or READ- MODIFY-WRITE) within a given row. The 4 Meg x 16 DRAM must be refreshed periodi- cally in order to retain stored data. DRAM ACCESS Each location in the DRAM is uniquely addressable, as mentioned in the General Description. Use of both CAS# signals results in a word access via the 16 I/O pins (DQ0-DQ15). Using only one of the two signals results in a BYTE access cycle. CASL# transitioning LOW se- lects an access cycle for the lower byte (DQ0-DQ7), and CASH# transitioning LOW selects an access cycle for 4 MEG x 16 EDO DRAM |
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