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BAV99W Datasheet(PDF) 2 Page - Yea Shin Technology Co., Ltd |
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BAV99W Datasheet(HTML) 2 Page - Yea Shin Technology Co., Ltd |
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2 / 3 page  http://www.yeashin.com 2 REV.02 20120305 BAV99W THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation PD 200 mW FR–5 Board, (Note 1.) TA = 25°C Derate above 25°C 1.6 mW/°C Thermal Resistance Junction to Ambient RθJA 625 °C/W Total Device Dissipation PD 300 mW Alumina Substrate, (Note 2.) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature TJ,Tstg –65 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µA) V(BR) 70 –– Vdc Reverse Voltage Leakage Current (VR = 70 Vdc) IR –– 2.5 µAdc (VR = 25 Vdc, TJ = 150°C) –– 30 (VR = 70 Vdc, TJ = 150°C) –– 50 Diode Capacitance CD –– 1.5 pF (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) VF –– 715 mVdc (IF = 10 mAdc) –– 855 (IF = 50 mAdc) –– 1000 (IF = 150 mAdc) –– 1250 Reverse Recovery Time RL = 100 Ω trr –– 6.0 ns (IF=IR=10 mAdc, iR(REC)=1.0mAdc) (Figure 1) Forward Recovery Voltage (IF = 10 mA, t r = 20 ns) VFR –– 1.75 V 1. FR–5 = 1.0 × 0.75 × 0.062 in. 2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina. Notes: 1. A 2.0 k Ω variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit +10 V 2.0 k 820 Ω 100 µH 0.1 µF D.U.T. 0.1 µF 50 Ω OUTPUT PULSE GENERATOR t r 50 Ω INPUT SAMPLING OSCILLOSCOPE t p t 10% 90% I F I R t rr t i R(REC) = 1.0 mA OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) INPUT SIGNAL I F V R |
Similar Part No. - BAV99W |
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Similar Description - BAV99W |
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