IS42RM16800F

In general, this 128Mb SDRAM (2M x 16Bits x 4banks) is a multi-bank DRAM that operates at 2.5V and includes a synchronous

Functional Description

interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 33,554,432-bit banks is organized as

4,096 rows by 512 columns by 16-bits

Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed

number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed

by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and

row to be accessed (BA0-BA1 select the bank, A0-A11 select the row). The address bits (BA0-BA1 select the bank, A0-A8 select the

column) registered coincident with the READ or WRITE command are used to select the starting column location for the burst access.

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Prior tonormal operation, the SDRAM must be initialized. The following sections provide detailed information covering device

initialization, register definition, command descriptions and device operation.

Power up and Initialization

SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in

undefined operation. Once power is applied to VDD and VDDQ(simultaneously) and the clock is stable(stable clock is defined as a

signal cycling within timing constraints specified for the clock pin), the SDRAM requires a 100µs delay prior to issuing any command

other than a COMMAND INHIBIT or NOP CKE must be held high during the entire initialization period until the PRECHARGE command

other than a COMMAND INHIBIT or NOP. CKE must be held high during the entire initialization period until the PRECHARGE command

has been issued. Starting at some point during this 100µs period and continuing at least through the end of this period, COMMAND

INHIBIT or NOP commands should be applied.

Once the 100µs delay has been satisfied with at least one COMMAND INHIBIT or NOP command having been applied, a PRECHARGE

command should be applied. All banks must then be precharged, thereby placing the device in the all banks idle state.

Once in theidlestate, two AUTO REFRESHcyclesmust be performed. After the AUTO REFRESH cycles arecomplete, theSDRAM is

ready for mode register programming. Because the mode register will power up in an unknown state, it should be loaded prior to

applying any operational command. And a extended mode register set command will be issued to program specific mode of self

applying any operational command. And a extended mode register set command will be issued to program specific mode of self

refresh operation(PASR). The following these cycles, the Mobile SDRAM is ready for normal operation.

Register Definition

Mode Register

The mode register is used to define the specific mode of operation of the SDRAM. This definition includes the selection of a burst

length, a burst type, a CAS latency, an operating mode and a write burst mode. The mode register is programmed via the LOAD

MODE REGISTER command and will retain the stored information until it is programmed again or the device loses power

MODE REGISTER command and will retain the stored information until it is programmed again or the device loses power.

Mode register bits M0-M2 specify the burst length, M3 specifies the type of burst (sequential or interleaved), M4-M6 specify the CAS

latency, M7 and M8 specify the operating mode, M9 specifies the write burst mode, and M10-M11 should be set to zero. M12 should

be set to zero to prevent extended mode register.

Themoderegistermustbe loadedwhen all banksare idle, and the controller must wait the specified time before initiating the

subsequent operation. Violating either of these requirements will result in unspecified operation.

Extended Mode Register

The Extended Mode Register controls the functions beyond those controlled by the Mode Register. These additional functions are

special features of the BATRAM device. They include Partial Array Self Refresh (PASR) and Driver Strength (DS).

The Extended Mode Register is programmed via the Mode Register Set command and retains the stored information until it is

programmed again or the device loses power.

TheExtendedModeRegistermustbeprogrammedwithM7through M11set to “0”. TheExtendedModeRegistermustbeloadedwhen

all banks are idle and no bursts are in progress, and the controller must wait the specified time before initiating any subsequent

operation. Violating either of these requirements results in unspecified operation.

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Rev. A | July 2010