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TPS65010RGZT Datasheet(PDF) 7 Page - Texas Instruments |
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TPS65010RGZT Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 63 page  TPS65010 www.ti.com SLVS149C – JUNE 2003 – REVISED SEPTEMBER 2015 Electrical Characteristics (continued) VI(MAIN) = VI(CORE) = VCC = VI(LDO1) = VI(LDO2) = 3.6 V, TA = -40°C to 85°C, typical values are at TA = 25°C battery charger specifications are valid in the range 0°C < TA < 85°C unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Time between UVLO going active td(uvlo) (PWRFAIL going low) and supplies being 1.68 2.4 3.2 ms disabled Time between chip overtemperature td(overtemp) condition being recognized (PWRFAIL 1.68 2.4 3.2 ms going low) and supplies being disabled SUPPLY PIN: VCC I(Q) Operating quiescent current VI = 3.6 V, current into Main + Core + VCC 58 µA VI = 3.6 V, BATT_COVER = GND, IO(SD) Shutdown supply current 15 25 µA Current into Main + Core + VCC VMAIN STEP-DOWN CONVERTER VI Input voltage range 2.5 6.0 V IO Maximum output current 1000 mA IO(SD) Shutdown supply current BATT_COVER = GND 0.1 1 µA rDS(on) P-channel MOSFET on-resistance VI(MAIN) = VGS = 3.6 V 110 210 m Ω Ilkg(p) P-channel leakage current V(DS) = 6.0 V 1 µA rDS(on) N-channel MOSFET on-resistance VI(MAIN) = VGS = 3.6 V 110 200 m Ω Ilkg(N) N-channel leakage current V(DS) = 6.0 V 1 µA IL P-channel current limit 2.5 V< VI(MAIN) < 6.0 V 1.4 1.75 2.1 A fS Oscillator frequency 1 1.25 1.5 MHz VI(MAIN) = 2.7 V to 6.0 V; IO = 0 mA 0% 3% 2.5 V VI(MAIN) = 2.7 V to 6.0 V; 3% 3% 0 mA ≤ IO ≤ 1000 mA VI(MAIN) = 2.95 V to 6.0 V; IO = 0 mA 0% 3% 2.75 V VI(MAIN) = 2.95 V to 6.0 V; 3% 3% 0 mA ≤ IO ≤ 1000 mA VO(MAIN) Fixed output voltage VI(MAIN) = 3.2 V to 6.0 V; IO = 0 mA 0% 3% 3.0 V VI(MAIN) = 3.2 V to 6.0 V; 3% 3% 0 mA ≤ IO ≤ 1000 mA VI(MAIN) = 3.5 V to 6.0 V; IO= 0 mA 0% 3% 3.3 V VI(MAIN) = 3.5 V to 6.0 V; 3% 3% 0 mA ≤ IO ≤ 1000 mA VI(MAIN) = VO(MAIN) + 0.5 V (min. 2.5 V) to Line regulation 0.5 %/V 6.0 V, IO = 10 mA Load regulation IO = 10 mA to 1000 mA 0.12 %/A R(VMAIN) VMAIN discharge resistance 400 Ω VCORE STEP-DOWN CONVERTER VI Input voltage range 2.5 6.0 V IO Maximum output current 400 mA IO(SD) Shutdown supply current BATT_COVER = GND 0.1 1 µA rDS(on) P-channel MOSFET on-resistance VI(CORE) = VGS = 3.6 V 275 530 m Ω Ilkg(p) P-channel leakage current VDS = 6.0 V 0.1 1 µA rDS(on) N-channel MOSFET on-resistance VI(CORE) = VGS = 3.6 V 275 500 m Ω Ilkg(N) N-channel leakage current VDS = 6.0 V 0.1 1 µA IL P-channel current limit 2.5 V< VI(CORE) < 6.0 V 600 700 900 mA fS Oscillator frequency 1 1.25 1.5 MHz Copyright © 2003–2015, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: TPS65010 |
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