LP8862-Q1

SNVSA75A – NOVEMBER 2015 – REVISED NOVEMBER 2015

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6.4 Thermal Information

LP8862-Q1

PWP (TSSOP)

UNIT

20 PINS

44.2

°C/W

Junction-to-case (top) thermal resistance

26.5

°C/W

Junction-to-board thermal resistance

22.4

°C/W

Junction-to-top characterization parameter

0.9

°C/W

Junction-to-board characterization parameter

22.2

°C/W

Junction-to-case (bottom) thermal resistance

2.5

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

(2)

Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power

dissipation exists, special care must be paid to thermal dissipation issues in board design.

6.5 Electrical Characteristics

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Standby supply current

4.5

20

μA

Active supply current

current 160 mA/channel, converter

5

12

mA

LDO pin voltage. Output of the

Power-on reset rising threshold

internal LDO or an external supply

2.7

V

LDO pin voltage. Output of the

Power-on reset falling threshold

internal LDO or an external supply

1.5

Thermal shutdown threshold

150

165

175

°C

Thermal shutdown hysteresis

20

(1)

All voltages are with respect to the potential at the GND pins.

(2)

Min and Max limits are specified by design, test, or statistical analysis.

6.6 Internal LDO Electrical Characteristics

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Output voltage

4.15

4.3

4.45

V

Dropout voltage

120

220

430

mV

Short circuit current

50

mA

6.7 Protection Electrical Characteristics

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VIN OVP threshold voltage

41

42

44

V

VIN OCP current

2.7

3.2

3.7

A

VIN UVLO

4.0

V

100

mV

T

LED short detection threshold

5.6

6

7

V

6

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