TPS65022_16 datasheet(8/47 Pages) TI1

Part #	TPS65022

Description	Power Management IC for Li-Ion Powered Systems

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Manufacturer	TI1 [Texas Instruments]

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TPS65022

SLVS667B – JULY 2006 – REVISED JANUARY 2016

www.ti.com

Electrical Characteristics (continued)

VINDCDC1 = VINDCDC2 = VINDCDC3 = VCC = VINLDO = 3.6 V, VBACKUP = 3 V, TA = –40°C to 85°C, typical values are

at TA = 25°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Forward current limit (P- and N-channel)

2.5 V < VI(MAIN) < 6 V

1.55

1.75

1.95

A

fS

Oscillator frequency

1.3

1.5

1.7

MHz

3 V

VINDCDC1 = 3.3 V to 6 V; 0 mA

≤ IO ≤ 1.2 A

–2%

2%

Fixed output voltage FPWMDCDC1 = 0

3.3 V

VINDCDC1 = 3.6 V to 6 V; 0 mA

≤ IO ≤ 1.2 A

–2%

2%

3 V

VINDCDC1 = 3.3 V to 6 V; 0 mA

≤ IO ≤ 1.2 A

–1%

1%

Fixed output voltage FPWMDCDC1 = 1

3.3 V

VINDCDC1 = 3.6 V to 6 V; 0 mA

≤ IO ≤ 1.2 A

–1%

1%

Adjustable output voltage with resistor divider at

VINDCDC1 = VDCDC1 + 0.3 V (min 2.5 V) to 6 V;

–2%

2%

DEFDCDC1; FPWMDCDC1 = 0

0 mA

≤ IO ≤ 1.2 A

Adjustable output voltage with resistor divider at

VINDCDC1 = VDCDC1 + 0.3 V (min 2.5 V) to 6 V;

–1%

1%

DEFDCDC1; FPWMDCDC1 = 1

0 mA

≤ IO ≤ 1.2 A

VINDCDC1 = VDCDC1 + 0.3 V (min 2.5 V) to 6 V;

Line Regulation

0

%/V

IO = 10 mA

Load Regulation

IO = 10 mA to 1200 mA

0.25

%/A

Soft start ramp time

VDCDC1 ramping from 5% to 95% of target value

750

μs

Internal resistance from L1 to GND

1

M

Ω

VDCDC1 discharge resistance

DCDC1 discharge = 1

300

Ω

VDCDC2 STEP-DOWN CONVERTER

VI

Input voltage range, VINDCDC2

2.5

6

V

IO

Maximum output current

1000

mA

I(SD)

Shutdown supply current in VINDCDC2

DCDC2_EN = GND

0.1

1

μA

rDS(on)

P-channel MOSFET on-resistance

VINDCDC2 = V(GS) = 3.6 V

140

300

m

Ω

Ilkg

P-channel leakage current

VINDCDC2 = 6 V

2

μA

rDS(on)

N-channel MOSFET on-resistance

VINDCDC2 = V(GS) = 3.6 V

150

297

m

Ω

Ilkg

N-channel leakage current

V(DS) = 6 V

7

10

μA

ILIMF

Forward current limit (P- and N-channel)

2.5 V < VINDCDC2 < 6 V

1.4

1.55

1.7

A

fS

Oscillator frequency

1.3

1.5

1.7

MHz

1.8 V

VINDCDC2 = 2.5 V to 6 V; 0 mA

≤ IO ≤ 1 A

–2%

2%

Fixed output voltage FPWMDCDC2 = 0

2.5 V

VINDCDC2 = 2.8 V to 6 V; 0 mA

≤ IO ≤ 1 A

–2%

2%

1.8 V

VINDCDC2 = 2.5 V to 6 V; 0 mA

≤ IO ≤ 1 A

–2%

2%

Fixed output voltage FPWMDCDC2 = 1

2.5 V

VINDCDC2 = 2.8 V to 6 V; 0 mA

≤ IO ≤ 1 A

–1%

1%

Adjustable output voltage with resistor divider at

VINDCDC2 = VDCDC2 + 0.3 V (min 2.5 V) to 6 V;

–2%

2%

DEFDCDC2 FPWMDCDC2 = 0

0 mA

≤ IO ≤ 1 A

Adjustable output voltage with resistor divider at

VINDCDC2 = VDCDC2 + 0.3 V (min 2.5 V) to 6 V;

–1%

1%

DEFDCDC2; FPWMDCDC2 = 1

0 mA

≤ IO ≤ 1 A

VINDCDC2 = VDCDC2 + 0.3 V (min 2.5 V) to 6 V;

Line Regulation

0

%/V

IO = 10 mA

Load Regulation

IO = 10 mA to 1 mA

0.25

%/A

Soft start ramp time

VDCDC2 ramping from 5% to 95% of target value

750

μs

Internal resistance from L2 to GND

1

M

Ω

VDCDC2 discharge resistance

DCDC2 discharge =1

300

Ω

VDCDC3 STEP-DOWN CONVERTER

VI

Input voltage range, VINDCDC3

2.5

6

V

IO

Maximum output current

900

mA

I(SD)

Shutdown supply current in VINDCDC3

DCDC3_EN = GND

0.1

1

μA

rDS(on)

P-channel MOSFET on-resistance

VINDCDC3 = V(GS) = 3.6 V

310

698

m

Ω

Ilkg

P-channel leakage current

VINDCDC3 = 6 V

0.1

2

μA

rDS(on)

N-channel MOSFET on-resistance

VINDCDC3 = V(GS) = 3.6 V

220

503

m

Ω

Ilkg

N-channel leakage current

V(DS) = 6 V

7

10

μA

Forward current limit (P- and N-channel)

2.5 V < VINDCDC3 < 6 V

1.15

1.34

1.52

A

fS

Oscillator frequency

1.3

1.5

1.7

MHz

8

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