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BQ27320 Datasheet(PDF) 7 Page - Texas Instruments

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Part # BQ27320
Description  Single-Cell CEDV Fuel Gauge
Download  29 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

BQ27320 Datasheet(HTML) 7 Page - Texas Instruments

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7
bq27320
www.ti.com
SLUSCG9A – FEBRUARY 2016 – REVISED MARCH 2016
Product Folder Links: bq27320
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Copyright © 2016, Texas Instruments Incorporated
(1)
If the clock frequency (fSCL) is > 100 kHz, use 1-byte write commands for proper operation. All other transactions types are supported at
400 kHz. (Refer to I2C Interface and I2C Command Waiting Time)
7.13 I
2C-Compatible Interface Communication Timing Characteristics
TA = –40°C to 85°C, 2.4 V < VCC < 2.6 V; typical values at TA = 25°C and VCC = 2.5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
tr
SCL/SDA rise time
300
ns
tf
SCL/SDA fall time
300
ns
tw(H)
SCL pulse duration (high)
600
ns
tw(L)
SCL pulse duration (low)
1.3
μs
tsu(STA)
Setup for repeated start
600
ns
td(STA)
Start to first falling edge of SCL
600
ns
tsu(DAT)
Data setup time
100
ns
th(DAT)
Data hold time
0
ns
tsu(STOP)
Setup time for stop
600
ns
t(BUF)
Bus free time between stop and
start
66
μs
fSCL
Clock frequency(1)
400
kHz
(1)
5-k
Ω series resistor between SDQ pin and VPU.
(2)
tWDH must be less than tc to account for recovery.
7.14 SDQ Switching Characteristics
TA = –20°C to 70°C; VPU(min) = 2.65 VDC to 5.5 VDC, all voltages relative to VSS
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tc
Bit cycle time(1)
60
120
μs
tWSTRB
Write start cycle(1)
1
15
μs
tWDSU
Write data setup(1)
tWSTRB
15
μs
tWDH
Write data hold(1) (2)
60
tc
μs
trec
Recovery time(1)
1
μs
For memory command only
5
tRSTRB
Read start cycle(1)
1
13
μs
tODD
Output data delay(1)
tRSTRB
13
μs
tODHO
Output data hold(1)
17
60
μs
tRST
Reset time(1)
480
μs
tPPD
Presence pulse delay(1)
15
60
μs
tPP
Presence pulse(1)
60
240
μs
tEPROG
EPROM programming time
2500
μs
tPSU
Program setup time
5
μs
tPREC
Program recovery time
5
μs
tPRE
Program rising-edge time
5
μs
tPFE
Program falling-edge time
5
μs
tRSTREC
480
μs


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