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RGTH00TS65D Datasheet(PDF) 2 Page - Rohm |
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RGTH00TS65D Datasheet(HTML) 2 Page - Rohm |
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2 / 12 page  www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Data Sheet RGTH00TS65D lThermal Resistance lIGBT Electrical Characteristics (at T j = 25°C unless otherwise specified) Parameter Symbol Values Unit Min. Typ. Max. °C/W Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.54 °C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 1.42 Parameter Symbol Conditions Values Unit Min. Typ. Max. V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - - nA Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 34.7mA 4.5 5.5 6.5 V Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 Collector - Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V V Tj = 25°C - 1.6 2.1 Tj = 175°C - 2.1 - 2/11 2014.05 - Rev.B |
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