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RGT30NS65D Datasheet(PDF) 7 Page - Rohm |
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RGT30NS65D Datasheet(HTML) 7 Page - Rohm |
7 / 12 page www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Data Sheet RGT30NS65D lElectrical Characteristic Curves Gate To Emitter Voltage : V GE [V] Gate To Emitter Voltage : V GE [V] Collector Current : I C [A] Fig.12 Typical Switching Time vs. Gate Resistance Gate Resistance : R G [Ω] 0 5 10 15 20 5 10 15 20 T j= 25ºC I C= 30A I C= 8A I C= 15A 0 5 10 15 20 5 10 15 20 T j= 175ºC I C= 30A I C= 8A I C= 15A 10 100 1000 0 10 20 30 40 t f V CC=400V, VGE=15V R G=10Ω, Tj=175ºC Inductive load t d(off) t d(on) t r 10 100 1000 0 10 20 30 40 50 t f t d(off) t d(on) t r V CC=400V, IC=15A V GE=15V, Tj=175ºC Inductive load Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Fig.11 Typical Switching Time vs. Collector Current 7/11 2014.05 - Rev.A |
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