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RGT30NS65D Datasheet(PDF) 2 Page - Rohm |
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RGT30NS65D Datasheet(HTML) 2 Page - Rohm |
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2 / 12 page  www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Data Sheet RGT30NS65D lThermal Resistance lIGBT Electrical Characteristics (at T j = 25°C unless otherwise specified) V Tj = 25°C - 1.65 2.1 Tj = 175°C - 2.15 - VCE(sat) IC = 15A, VGE = 15V - 200 nA Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 10.0mA 5.0 6.0 7.0 V Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 Thermal Resistance Diode Junction - Case Rθ(j-c) - - 2.86 Symbol Conditions Values Unit Min. Typ. Max. Collector - Emitter Saturation Voltage Unit Min. Typ. Max. Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 1.12 °C/W Parameter Symbol Values °C/W Parameter 2/11 2014.05 - Rev.A |
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