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CMPA0060002D Rev 1.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

www.cree.com/wireless

Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree

and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their

respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.

Functional Block Diagram

This device employs a wideband, traveling wave amplifier topology. It has an internal termination for both

the Drain and the Gate, which works well over 2.5-6.0 GHz. For operation below 2.5 GHz an external termination is

required. This termination needs to be DC-blocked and suitable to withstand up to 3 W of RF power. (Refer to the

reference design section for the LF-termination in this data sheet for more details). The circuits also require external

wideband Bias –T’s to supply voltage to the Gate and Drain. The Bias-T at the Drain needs to be designed to handle 28

V and up to 800 mA.

Figure 1.