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CMPA0060002D Datasheet(PDF) 3 Page - Cree, Inc |
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CMPA0060002D Datasheet(HTML) 3 Page - Cree, Inc |
3 / 7 page ![]() 3 CMPA0060002D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE www.cree.com/wireless Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. Die Dimensions (units in microns) Overall die size 4280 x 1670 (+0/-50) microns, die thickness 100 (+/-10) micron. All Gate and Drain pads must be wire bonded for electrical connection. Pad Number Function Description Pad Size (microns) 1 RF IN1 RF-Input pad. Matched to 50 ohm. Requires gate control from an external bias –T from -2.3 V to -3.8 V. 200 x 150 2 Gate Termination Off Chip termination for the Gate. It needs to be DC-blocked . 200 x 150 3 Drain Termination Off Chip termination for the Drain. It needs to be DC-blocked. 200 x 150 4 RF OUT1 RF-Output pad. Matched to 50 ohm. Requires Drain supply from an external bias –T up to 26 V , 800 mA 200 x 150 Notes: 1 The RF In and Out pads have a ground-signal-ground configuration with a pitch of 1 mil (25 um).. Die Assembly Notes: • Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at www.cree.com/wireless. • Vacuum collet is the preferred method of pick-up. • The backside of the die is the Source (ground) contact. • Die back side gold plating is 5 microns thick minimum. • Thermosonic ball or wedge bonding are the preferred connection methods. • Gold wire must be used for connections. • Use the die label (XX-YY) for correct orientation. |
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