CMPA0060002D datasheet(2/7 Pages) CREE

Part #	CMPA0060002D

Description	2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier

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Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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CMPA0060002D Rev 1.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.CREE

www.cree.com/wireless

and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their

respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.

Absolute Maximum Ratings (not simultaneous) at 25˚C

Parameter

Symbol

Rating

Units

Drain-source Voltage

V

DSS

84

VDC

Gate-source Voltage

V

GS

-10, +2

VDC

Storage Temperature

T

STG

-65, +150

˚C

Operating Junction Temperature

T

J

225

˚C

Maximum Forward Gate Current

I

GMAX

2

mA

Thermal Resistance, Junction to Case (packaged)1

R

θJC

4.0

˚C/W

Note1 Eutectic die attach using 80/20 AuSn mounted to a 40 mil thick CuW carrier.

Electrical Characteristics (Frequency = 20 MHz to 6,000 MHz unless otherwise stated; T

C = 25˚C)

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

DC Characteristics

Gate Threshold Voltage1

V

(GS)TH

-3.8

-3.0

-2.7

V

DS = 20 V, ∆ID = 2 mA

Gate Quiescent Voltage

V

GS(Q)

–

-2.7

–

VDC

V

DD = 26 V, IDQ = 100 mA

Saturated Drain Current2

I

DS

–

1.94

–

A

V

DS = 6.0 V, VGS = 2.0 V

RF Characteristics5

Small Signal Gain3

S21

13.5

18

–

dB

V

DD = 26 V, IDQ = 100 mA

Input Return Loss

S11

–

9

–

dB

V

DD = 26 V, IDQ = 100 mA

Output Return Loss

S22

–

11

–

dB

V

DD = 26 V, IDQ = 100 mA

Output Power4

P

OUT

2

4

–

W

V

DD = 26 V, IDQ = 100 mA,

P

IN = 23 dBm

Power Added Efficiency

PAE

–

30

–

%

V

DD = 26 V, IDQ = 100 mA,

P

IN = 23 dBm

Power Gain

G

P

–

13.0

–

dB

V

DD = 26 V, IDQ = 100 mA,

P

IN = 23 dBm

Output Mismatch Stress

VSWR

–

5 : 1

Y

No damage at all phase angles,

V

DD = 26 V, IDQ = 100 mA,

P

IN = 23 dBm

Notes:

1

The device will draw approximately 20-25 mA at pinch off due to the internal circuit structure.

2

Scaled from PCM data.

3

The lowest test frequency is 1.0 GHz due to the lack of a low frequency termination.

4

Test frequencies 1.0, 2.5, and 4.0 GHz.

5

All data pulsed with Pulse Width = 10

μsec, Duty Cycle = 0.1%.

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