1

Subject to change without notice.

www.cree.com/wireless

CMPA0060002D

2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier

Cree’s CMPA0060002D is a gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) based monolithic microwave integrated

circuit (MMIC). GaN has superior properties compared to silicon

or gallium arsenide, including higher breakdown voltage,

higher saturated electron drift velocity and higher thermal

conductivity. GaN HEMTs also offer greater power density and

wider bandwidths compared to Si and GaAs transistors. This

MMIC employs a distributed (traveling-wave) amplifier design

approach, enabling extremely wide bandwidths to be achieved

in a small footprint.

PN: CMPA0060002D

Parameter

0.5 GHz

1.0 GHz

2.5 GHz

4.0 GHz

6.0 GHz

Units

Gain

18.7

17.4

17.6

17.4

17.6

dB

Saturated Output Power @ P

7.0

6.3

5.7

4.3

3.6

W

Power Gain @ P

15.4

15.0

14.5

13.3

12.5

dB

PAE @ P

43

40

36

28

31

%

Note: V

Features

SAT

Applications