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SMBTA42M Datasheet(PDF) 2 Page - Infineon Technologies AG |
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SMBTA42M Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 4 page ![]() SMBTA42M Nov-30-2001 2 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 V(BR)CEO 300 - - V Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO 300 - - Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 6 - - Collector cutoff current VCB = 200 V, IE = 0 ICBO - - 100 nA Collector-base cutoff current VCB = 200 V, TA = 150 °C ICBO - - 20 µA Emitter cutoff current VEB = 3 V, IC = 0 IEBO - - 100 nA DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V hFE 25 40 40 - - - - - - - Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA VCEsat - - 0.5 V Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA VBEsat - - 0.9 AC Characteristics - - Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz fT MHz 50 - Collector-base capacitance VCB = 20 V, f = 1 MHz Ccb 3 pF - 1) Pulse test: t < 300 s; D < 2% |
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