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SMBTA42M Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SMBTA42M Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page ![]() SMBTA42M Nov-30-2001 1 NPN Silicon High-Voltage Transistor High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA92M (PNP) VPW05980 1 2 3 5 4 Type Marking Pin Configuration Package SMBTA42M s1D 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT595 Maximum Ratings Parameter Symbol Unit Value V VCEO 300 Collector-emitter voltage Collector-base voltage VCBO 300 6 Emitter-base voltage VEBO mA DC collector current 500 IC 100 Base current IB Total power dissipation, TS 83 °C Ptot W 1.5 150 °C Junction temperature Tj Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 45 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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