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IPD06N03L Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPD06N03L Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page 2003-01-17 Page 3 IPD06N03L Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=30A 29 58 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1900 2530 pF Output capacitance Coss - 740 990 Reverse transfer capacitance Crss - 180 270 Turn-on delay time td(on) VDD=15V, VGS=10V, ID=25A, RG=3.6Ω - 7.3 11 ns Rise time tr - 19 29 Turn-off delay time td(off) - 34 50 Fall time tf - 20.5 30.7 Gate Charge Characteristics Gate to source charge Qgs VDD=15V, ID=25A - 6.3 8.4 nC Gate to drain charge Qgd - 12.3 16.4 Gate charge total Qg VDD=15V, ID=25A, VGS=0 to 5V - 25.8 34.3 Output charge Qoss VDS=15V, ID=25A, V GS=0V - 35.5 31.9 nC Gate plateau voltage V(plateau) VDD=15V, ID=25A - 3.1 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 50 A Inv. diode direct current, pulsed ISM - - 200 Inverse diode forward voltage VSD VGS=0V, IF=50A - 0.9 1.2 V Reverse recovery time trr VR=15V, IF=lS, diF/dt=100A/µs - 41 51 ns Reverse recovery charge Qrr - 46 58 nC |
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