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IPD06N03L Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IPD06N03L Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 8 page 2003-01-17 Page 6 IPD06N03L 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 30 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj 0 1 2 3 4 5 6 7 8 9 10 11 12 Ω 14 IPD06N03L typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 180 Tj 0 0.5 1 1.5 V 2.5 1mA 85µA 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 V 30 VDS 2 10 3 10 4 10 pF Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD 0 10 1 10 2 10 3 10 A IPD06N03L T j = 25 °C typ T j = 25 °C (98%) T j = 175 °C typ T j = 175 °C (98%) |
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