CDCE62005 datasheet(7/85 Pages) TI1

Part #	CDCE62005

Description	3:5 Clock Generator

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Manufacturer	TI1 [Texas Instruments]

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CDCE62005

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SCAS862F – NOVEMBER 2008 – REVISED JANUARY 2015

6.4 Electrical Characteristics

recommended operating conditions for the CDCE62005 device for under the specified Industrial temperature range of –40°C

to 85°C

PARAMETER

TEST CONDITIONS

MIN

TYP(1)

MAX

UNIT

POWER SUPPLY

VCC

Supply voltage

3

3.3

3.6

V

VCC_PLL,

VCC_IN,

Analog supply voltage

3

3.3

3.6

VCC_VCO,

VCCA

REF at 30.72,MHz, Outputs are

Output 1 = 491.52 MHz

PLVPECL

1.9

W

LVPECL

Output 2 = 245.76 MHz

Output 3 = 122.88 MHz

REF at 30.72 MHz, Outputs are

PLVDS

1.65

W

Output 4 = 61.44 MHz

LVDS

Output 5 = 30.72 MHz

REF at 30.72 MHz, Outputs are

In case of LVCMOS

PLVCMOS

1.8

W

LVCMOS

Output1 = 245.76 MHz

Dividers are disabled. Outputs are

POFF

REF at 30.72 MHz

0.75

W

disabled.

PPD

Device is powered down

20

mW

DIFFERENTIAL INPUT MODE (PRI_REF, SEC_REF)

Differential input amplitude (VIN –

VIN

0.1

1.3

V

V/IN)

VIC

Common-mode input voltage

1.0

VCC–0.3

V

Differential input current high (no

IIH

VI = VCC, VCC = 3.6 V

20

μA

internal termination)

Differential input current low (no

IIL

VI = 0 V, VCC = 3.6 V

–20

20

μA

internal termination)

Input Capacitance on PRI_REF,

3

pF

SEC_REF

CRYSTAL INPUT SPECIFICATIONS

On-chip load capacitance

8

10

pF

Equivalent series resistance (ESR)

50

Ω

LVCMOS INPUT MODE (SPI_CLK, SPI_MOSI, SPI_LE, Power_Down, SYNC, REF_SEL, PRI_REF, SEC_REF )

Low-level input voltage LVCMOS,

0

0.3 x VCC

V

High-level input voltage LVCMOS

0.7 x VCC

VCC

V

VIK

LVCMOS input clamp voltage

VCC = 3 V, II = –18 mA

–1.2

V

IIH

LVCMOS input current

VI = VCC, VCC = 3.6 V

20

μA

LVCMOS input (Except PRI_REF

IIL

VI = 0 V, VCC = 3.6 V

–10

–40

μA

and SEC_REF)

LVCMOS input (PRI_REF and

IIL

VI = 0 V, VCC = 3.6 V

–10

10

μA

SEC_REF)

CI

Input capacitance

VI = 0 V or VCC

3

pF

SPI OUTPUT (MISO) / PLL_LOCK OUTPUT

IOH

High-level output current

VCC = 3.3 V,

VO = 1.65 V

–30

mA

IOL

Low-level output current

VCC = 3.3 V,

VO = 1.65 V

33

mA

High-level output voltage for

VOH

VCC = 3 V,

IOH = −100 μA

VCC–0.5

V

LVCMOS outputs

Low-level output voltage for

VOL

VCC = 3 V,

IOL = 100 μA

0.3

V

LVCMOS outputs

CO

Output capacitance on MISO

VCC = 3.3 V; VO = 0 V or VCC(1)

3

pF

IOZH

5

VO = VCC

3-state output current

μA

VO = 0 V

IOZL

–5

(1)

All typical values are at VCC = 3.3 V, temperature = 25°C

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