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TPA3110D2 Datasheet(PDF) 5 Page - Texas Instruments |
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TPA3110D2 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 34 page ![]() TPA3110D2 www.ti.com SLOS528E – JULY 2009 – REVISED NOVEMBER 2015 7.2 ESD Ratings VALUE UNIT Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V(ESD) Electrostatic discharge V Charged-device model (CDM), per JEDEC specification JESD22- ±500 C101(2) (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VCC Supply voltage PVCC, AVCC 8 26 V VIH High-level input voltage SD, GAIN0, GAIN1, PBTL 2 V VIL Low-level input voltage SD, GAIN0, GAIN1, PBTL 0.8 V VOL Low-level output voltage FAULT, RPULL-UP= 100 k, VCC= 26 V 0.8 V IIH High-level input current SD, GAIN0, GAIN1, PBTL, VI = 2 V, VCC = 18 V 50 µA IIL Low-level input current SD, GAIN0, GAIN1, PBTL, VI = 0.8 V, VCC = 18 V 5 µA TA Operating free-air temperature –40 85 °C 7.4 Thermal Information TPA3110D2 THERMAL METRIC(1) PWP (HTSSOP) UNIT 28 PINS RθJA Junction-to-ambient thermal resistance 30.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 33.5 °C/W RθJB Junction-to-board thermal resistance 17.5 °C/W ψJT Junction-to-top characterization parameter 0.9 °C/W ψJB Junction-to-board characterization parameter 7.2 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 0.9 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.5 DC Characteristics: 24 V TA = 25°C, VCC = 24 V, RL = 8 Ω (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Class-D output offset voltage (measured | VOS | VI = 0 V, Gain = 36 dB 1.5 15 mV differentially) ICC Quiescent supply current SD = 2 V, no load, PVCC = 24 V 32 50 mA ICC(SD) Quiescent supply current in shutdown mode SD = 0.8 V, no load, PVCC = 24 V 250 400 µA High Side 240 VCC = 12 V, IO = 500 mA, rDS(on) Drain-source on-state resistance m Ω TJ = 25°C Low side 240 GAIN0 = 0.8 V 19 20 21 GAIN1 = 0.8 V dB GAIN0 = 2 V 25 26 27 G Gain GAIN0 = 0.8 V 31 32 33 GAIN1 = 2 V dB GAIN0 = 2 V 35 36 37 ton Turn-on time SD = 2 V 14 ms tOFF Turn-off time SD = 0.8 V 2 μs GVDD Gate Drive Supply IGVDD = 100 μA 6.4 6.9 7.4 V tDCDET DC Detect time V(RINN) = 6 V, VRINP = 0 V 420 ms Copyright © 2009–2015, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: TPA3110D2 |
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