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TPA3110D2 Datasheet(PDF) 22 Page - Texas Instruments |
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TPA3110D2 Datasheet(HTML) 22 Page - Texas Instruments |
22 / 34 page VCC − Supply Voltage − V 0 5 10 15 20 25 30 6 8 10 12 14 16 18 20 22 24 26 G016 THD = 10% THD = 1% Gain = 20 dB ZL = 8 + 66 µH VCC − Supply Voltage − V 0 5 10 15 20 25 6 8 10 12 14 16 18 G017 THD = 10% THD = 1% Gain = 20 dB ZL = 4 + 33 µH TPA3110D2 SLOS528E – JULY 2009 – REVISED NOVEMBER 2015 www.ti.com In this example, CI is 0.13 µF; so, one would likely choose a value of 0.15 μF as this value is commonly used. If the gain is known and is constant, use ZI from Table 1 to calculate CI. A further consideration for this capacitor is the leakage path from the input source through the input network (CI) and the feedback network to the load. This leakage current creates a dc offset voltage at the input to the amplifier that reduces useful headroom, especially in high gain applications. For this reason, a low-leakage tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most applications as the dc level there is held at 3 V, which is likely higher than the source dc level. Note that it is important to confirm the capacitor polarity in the application. Additionally, lead-free solder can create dc offset voltages and it is important to ensure that boards are cleaned properly. 10.2.1.2.3 BSN and BSP Capacitors The full H-bridge output stages use only NMOS transistors. Therefore, they require bootstrap capacitors for the high side of each output to turn on correctly. A 0.22 μF ceramic capacitor, rated for at least 25 V, must be connected from each output to its corresponding bootstrap input. Specifically, one 0.22 μF capacitor must be connected from OUTPx to BSPx, and one 0.22 μF capacitor must be connected from OUTNx to BSNx. (See the application circuit diagram in Figure 41.) The bootstrap capacitors connected between the BSxx pins and corresponding output function as a floating power supply for the high-side N-channel power MOSFET gate drive circuitry. During each high-side switching cycle, the bootstrap capacitors hold the gate-to-source voltage high enough to keep the high-side MOSFETs turned on. 10.2.1.2.4 Using Low-ESR Capacitors Low-ESR capacitors are recommended throughout this application section. A real (as opposed to ideal) capacitor can be modeled simply as a resistor in series with an ideal capacitor. The voltage drop across this resistor minimizes the beneficial effects of the capacitor in the circuit. The lower the equivalent value of this resistance, the more the real capacitor behaves like an ideal capacitor. 10.2.1.3 Application Curves Note: Dashed Lines represent thermally limited regions. Note: Dashed Lines represent thermally limited regions. Figure 43. Output Power vs Supply Voltage (BTL) Figure 44. Output Power vs Supply Voltage (BTL) 22 Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: TPA3110D2 |
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