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PGA2311 Datasheet(PDF) 4 Page - Texas Instruments |
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PGA2311 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 21 page ![]() PGA2311 SBOS218B – DECEMBER 2001 – REVISED JANUARY 2016 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VA+ 5.5 VA– –5.5 Supply voltage V VD+ 5.5 VA+ to VD+ < ±0.3 Analog input voltage 0 VA+, VA− V Digital input voltage –0.3 VD+ V Operating temperature –40 85 °C Junction temperature 150 °C Lead temperature (soldering, 10s) 300 °C Package temperature (IR reflow, 10s) 235 °C Storage temperature, Tstg –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE UNIT PGA2311 in 16-Pin SOIC Package Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V(ESD) Electrostatic discharge V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500 PGA2311 in 16-Pin PDIP Package V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 V (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VA+ Positive analog power supply 4.75 5 5.25 V VA– Negative analog power supply –4.75 –5 –5.25 V VD+ Digital power supply 4.75 5 5.25 V Operating temperature –40 25 85 °C 6.4 Thermal Information PGA2311 THERMAL METRIC(1) N (PDIP) DW (SOIC) UNIT 16 PINS 16 PINS RθJA Junction-to-ambient thermal resistance 39.9 83 °C/W RθJC(top) Junction-to-case (top) thermal resistance 26.2 44 °C/W RθJB Junction-to-board thermal resistance 20.1 40.5 °C/W ψJT Junction-to-top characterization parameter 10.7 11.5 °C/W ψJB Junction-to-board characterization parameter 19.9 40.2 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 4 Submit Documentation Feedback Copyright © 2001–2016, Texas Instruments Incorporated Product Folder Links: PGA2311 |
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