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REF1925AIDDCR Datasheet(PDF) 18 Page - Texas Instruments |
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REF1925AIDDCR Datasheet(HTML) 18 Page - Texas Instruments |
18 / 31 page OUT SHUNT BIAS LOAD SHUNT BIAS V G V V G I R V r r RSHUNT ±ILOAD VBUS + IN+ IN- REF OUT + Bandgap V+ VCC VREF VBIAS VIN EN GND GND VOUT REF19xx INA213B + ± + ± ± VSHUNT REF1925, REF1930, REF1933, REF1941 SBOS697 – SEPTEMBER 2014 www.ti.com Typical Application (continued) 10.2.1 Design Requirements The design requirements are as follows: 1. Supply voltage: 5.0 V 2. Load current: ±2.5 A 3. Output: 250 mV to 2.75 V 4. Maximum shunt voltage: ±25 mV 10.2.2 Detailed Design Procedure Low-side current sensing is desirable because the common-mode voltage is near ground. Therefore, the current- sensing solution is independent of the bus voltage, VBUS. When sensing bidirectional currents, use a differential amplifier with a reference pin. This procedure allows for the differentiation between positive and negative currents by biasing the output stage such that it can respond to negative input voltages. There are a variety of methods for supplying power (V+) and the reference voltage (VREF, or VBIAS) to the differential amplifier. For a low-drift solution, use a monolithic reference that supplies both power and the reference voltage. Figure 46 shows the general circuit topology for a low-drift, low-side, bidirectional, current-sensing solution. This topology is particularly useful when interfacing with an ADC; see Figure 45. Not only do VREF and VBIAS track over temperature, but their matching is much better than alternate topologies. For a more detailed version of the design procedure, refer to TIDU357. Figure 46. Low-Drift, Low-side, Bidirectional, Current-Sensing Circuit Topology The transfer function for the circuit given in Figure 46 is as shown in Equation 5: (5) 18 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: REF1925 REF1930 REF1933 REF1941 |
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