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TLV333IDR Datasheet(PDF) 16 Page - Texas Instruments |
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TLV333IDR Datasheet(HTML) 16 Page - Texas Instruments |
16 / 34 page TLV333, TLV2333, TLV4333 SBOS751 – DECEMBER 2015 www.ti.com 10 Power Supply Recommendations The TLV333 is specified for operation from 1.8 V to 5.5 V (±0.9 V to ±2.75 V); many specifications apply from –40°C to +125°C. The Typical Characteristics section presents parameters that can exhibit significant variance with regard to operating voltage or temperature. CAUTION Supply voltages larger than 7 V can permanently damage the device (see the Absolute Maximum Ratings table). Place 0.1- μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or high- impedance power supplies. For more detailed information on bypass capacitor placement, see the Layout section. 11 Layout 11.1 Layout Guidelines 11.1.1 General Layout Guidelines Attention to good layout practice is always recommended. Keep traces short and, when possible, use a printed circuit board (PCB) ground plane with surface-mount components placed as close to the device pins as possible. Place a 0.1- μF capacitor closely across the supply pins. Apply these guidelines throughout the analog circuit to improve performance and to provide benefits such as reducing the electromagnetic interference (EMI) susceptibility. For lowest offset voltage and precision performance, circuit layout and mechanical conditions must be optimized. Avoid temperature gradients that create thermoelectric (Seebeck) effects in the thermocouple junctions formed from connecting dissimilar conductors. These thermally-generated potentials can be made to cancel by assuring they are equal on both input terminals. Other layout and design considerations include: • Use low thermoelectric-coefficient conditions (avoid dissimilar metals). • Thermally isolate components from power supplies or other heat sources. • Shield op amp and input circuitry from air currents, such as cooling fans. Following these guidelines reduces the likelihood of junctions being at different temperatures, which can cause thermoelectric voltages of 0.1 μV/°C or higher, depending on materials used. 16 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: TLV333 TLV2333 TLV4333 |
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