MTW24N40E datasheet(2/8 Pages) ONSEMI

Part #	MTW24N40E

Description	N?묬hannel Power MOSFET

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MTW24N40E

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

400

−

360

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 400 Vdc, VGS = 0 Vdc)

(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

10

100

µAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

2.0

−

7.0

4.0

−

Vdc

mV/

°C

Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 12 Adc)

RDS(on)

−

0.13

0.16

Ohm

Drain−Source On−Voltage (VGS = 10 Vdc)

(ID = 24 Adc)

(ID = 12 Adc, TJ =125°C)

VDS(on)

−

4.5

4.3

Vdc

Forward Transconductance (VDS = 15 Vdc, ID = 12 Adc)

gFS

11

17

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vd

V

0Vd

Ciss

−

4000

5600

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

−

530

740

Reverse Transfer Capacitance

f = 1.0 MHz)

Crss

−

112

220

SWITCHING CHARACTERISTICS (Note 2.)

Turn−On Delay Time

td(on)

−

32

60

ns

Rise Time

(VDD 200= Vdc, ID = 24 Adc,

VGS =10Vdc

tr

−

96

204

Turn−Off Delay Time

VGS = 10 Vdc,

RG = 9.1 Ω)

td(off)

−

99

194

Fall Time

RG

9.1

Ω)

tf

−

92

186

Gate Charge

(See Figure 8)

QT

−

98

160

nC

(VDS = 320 Vdc, ID = 24 Adc,

VGS = 10 Vdc)

Q1

−

24

−

VGS = 10 Vdc)

Q2

−

38

−

Q3

−

40

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (Note 1.)

(IS = 24 Adc, VGS = 0 Vdc)

(IS = 24 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

−

0.94

0.9

1.5

−

Vdc

Reverse Recovery Time

(S

Fi

14)

trr

−

372

−

ns

(See Figure 14)

(I

24 Adc V

0 Vdc

ta

−

244

−

(IS = 24 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

−

128

−

Reverse Recovery Stored

Charge

dIS/dt = 100 A/µs)

QRR

−

5.3

−

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25

″ from package to center of die)

LD

−

4.5

−

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

LS

−

13

−

nH

1. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

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